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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9642232 B1

PDFFull Text
Date of Patent:
May. 02, 2017

Filed:

Jun. 09, 2016

Silicon based ion emitter assembly

Applicant:

Illinois Tool Works Inc., Glenview, IL (US);

Inventors:

Peter Gefter, South San Francisco, CA (US);

Aleksey Klochkov, San Francisco, CA (US);

Assignee:

Illinois Tool Works Inc., Glenview, IL (US);

Attorney:

McAndrews, Held & Malloy, Ltd.

Primary Examiner:

Stephen W Jackson

Assistant Examiner:

Christopher Clark

Int. Cl.
CPC ...
H05F 3/04 (2006.01); H01T 19/04 (2006.01); H01T 23/00 (2006.01); H05F 3/06 (2006.01); B08B 7/00 (2006.01); B32B 7/12 (2006.01); B32B 15/08 (2006.01); B32B 15/082 (2006.01); B32B 15/085 (2006.01); B32B 15/18 (2006.01); B32B 17/10 (2006.01); B32B 27/30 (2006.01); B32B 27/32 (2006.01); H01L 31/048 (2014.01);
U.S. Cl.
CPC ...
H05F 3/04 (2013.01); B08B 7/0035 (2013.01); B32B 7/12 (2013.01); B32B 15/08 (2013.01); B32B 15/082 (2013.01); B32B 15/085 (2013.01); B32B 15/18 (2013.01); B32B 17/10009 (2013.01); B32B 17/10174 (2013.01); B32B 27/302 (2013.01); B32B 27/32 (2013.01); H01L 31/048 (2013.01); H01T 23/00 (2013.01); H05F 3/06 (2013.01); B32B 2255/06 (2013.01); B32B 2255/20 (2013.01); B32B 2255/205 (2013.01); B32B 2270/00 (2013.01); B32B 2307/202 (2013.01); B32B 2307/306 (2013.01); B32B 2307/412 (2013.01); B32B 2307/554 (2013.01); B32B 2307/558 (2013.01); B32B 2307/712 (2013.01); B32B 2307/7265 (2013.01); B32B 2307/73 (2013.01); B32B 2457/12 (2013.01); Y02E 10/50 (2013.01); Y10T 428/24942 (2015.01);
Abstract

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

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