The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

May. 28, 2014
Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Mitchell Flowers, Apex, NC (US);

Simon Wood, Raleigh, NC (US);

James W. Milligan, Cary, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H03K 5/125 (2006.01); H01L 23/495 (2006.01); H03F 3/21 (2006.01); H01L 23/433 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H01L 23/66 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H03K 5/125 (2013.01); H01L 23/4334 (2013.01); H01L 23/49513 (2013.01); H01L 23/66 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H01L 23/3107 (2013.01); H01L 23/49562 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21103 (2013.01); H03F 2203/21106 (2013.01); H03F 2203/21139 (2013.01); H03F 2203/21142 (2013.01);
Abstract

A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.


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