The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Sep. 25, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Norikazu Okada, Osaka, JP;
Kohei Yasukawa, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A light receiving sensor () includes: a photodiode (PD) which generates a photocurrent (Ipd) upon receipt of light; a transistor (Tr) through which the photocurrent (Ipd) flows; a transistor (Tr) which forms, together with the transistor (Tr), a first current mirror circuit (CM); a transistor (Tr) whose channel type is different from that of the transistor (Tr), and a resistor (R) which converts, to a voltage, a current flowing through the transistors (Trand Tr). The first current mirror circuit (CM) amplifies the photocurrent (Ipd), the transistor (Tr) has a source connected with a gate of a MOS transistor (Tr), and the MOS transistor (Tr) has a threshold voltage that is set to be equal to or above a threshold voltage of the transistor (Tr). This decreases a capacity of the photodiode (PD) and therefore allows the light receiving sensor () to operate at a high speed while the photodiode (PD) is biased.