The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Feb. 23, 2016
Junggun You, Ansan-si, KR;
Jeongmin Choi, Suwon-si, KR;
Ingyum Kim, Bucheon-si, KR;
Abstract
Methods of fabricating semiconductor devices may include forming an isolation region that defines a plurality of fin active regions on a semiconductor substrate, forming a sacrificial gate layer on the semiconductor substrate, forming a first hard mask line that crosses first and second fin active regions and an edge bard mask line that crosses an edge fin active region, and forming a gate cut mask having a plurality of gate cut openings. The plurality of gate cut openings may include first and second gate cut openings that have a first width and are adjacent to the first and second fin active regions, respectively, and an edge gate cut opening that is adjacent to the edge fin active region and has a second width that is greater than the first width but smaller than twice a size of the first width.