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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9640654 B1

PDFFull Text
Date of Patent:
May. 02, 2017

Filed:

Feb. 16, 2016

Semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Kyoya Nitta, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Whitney T Moore

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/285 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/28518 (2013.01); H01L 21/32051 (2013.01); H01L 21/76838 (2013.01); H01L 23/485 (2013.01); H01L 23/4824 (2013.01); H01L 23/5222 (2013.01); H01L 23/5283 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/4175 (2013.01); H01L 29/41758 (2013.01); H01L 29/41775 (2013.01); H01L 29/66659 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01); H01L 29/456 (2013.01); H01L 29/4933 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device with improved characteristics is provided. The semiconductor device includes a LDMOS, a source plug electrically coupled to a source region of the LDMOS, a source wiring disposed over the source plug, a drain plug electrically coupled to a drain region of the LDMOS, and a drain wiring disposed over the drain plug. The structure of the source plug of the semiconductor device is devised. The semiconductor device is structured such that the drain plug is linearly disposed to extend in a direction Y, and the source plug includes a plurality of separated source plugs arranged at predetermined intervals in the direction Y. In this way, the separation of the source plug decreases an opposed area between the source plug and the drain plug, and can thus decrease the parasitic capacitance therebetween.

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