The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
May. 22, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Ze Chen, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A planar MOSFET is provided on the upper surface of the N-type semiconductor substrate in a mesa portion between the trenches. A P-type emitter layer is provided between the trench and the planar MOSFET in the mesa portion. A P-type collector layer is provided on a lower surface of the N-type semiconductor substrate. The planar MOSFET includes an N-type emitter layer, an upper portion of the N-type semiconductor substrate, a P-type base layer, and a planar gate on the foregoing with a gate insulating film interposed therebetween. The planar gate is connected to the gate trench. The P-type emitter layer has a higher impurity concentration than the P-type base layer and has an electric potential equal to an emitter potential of the N-type emitter layer. The N-type emitter layer is not in contact with the trench. A trench MOSFET is not formed.