The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Jul. 17, 2014
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventor:

Mitsuhiko Sakai, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); G01R 31/12 (2006.01); H01L 25/07 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 25/50 (2013.01); G01R 31/129 (2013.01); H01L 25/072 (2013.01); H01L 29/1602 (2013.01); H01L 29/2003 (2013.01); H01L 29/7802 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15724 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/15747 (2013.01);
Abstract

A method of manufacturing a wide band gap semiconductor device includes the steps of preparing a wide band gap semiconductor substrate, separating the wide band gap semiconductor substrate into a plurality of first semiconductor chips, fixing the plurality of first semiconductor chips on a fixation member, measuring a breakdown voltage of each of the first semiconductor chips while immersing at least the first semiconductor chips in inert liquid, and after the step of measuring a breakdown voltage of each of the first semiconductor chips, providing a plurality of second semiconductor chips each having each of the first semiconductor chips fixed on the fixation member, by cutting the fixation member.


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