The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Mar. 19, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Akihiko Sagara, Hyogo, JP;

Norihito Fujinoki, Osaka, JP;

Yuki Nomura, Osaka, JP;

Haruhiko Habuta, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 21/288 (2006.01); H01M 14/00 (2006.01); H01G 11/56 (2013.01); H01G 11/84 (2013.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01G 11/56 (2013.01); H01G 11/84 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 21/288 (2013.01); H01M 14/00 (2013.01); Y02E 60/13 (2013.01);
Abstract

An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.


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