The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Feb. 12, 2015
Applicants:
Dong-jun Seong, Seongnam-si, KR;
Youn-seon Kang, Yongin-si, KR;
Inventors:
Dong-Jun Seong, Seongnam-si, KR;
Youn-Seon Kang, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/224 (2013.01); H01L 27/2418 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/148 (2013.01); H01L 45/16 (2013.01); H01L 45/1683 (2013.01);
Abstract
A semiconductor diode includes a first semiconductor pattern including a first impurity, a first diffusion barrier pattern on the first semiconductor pattern, an intrinsic semiconductor pattern on the first diffusion barrier pattern, a second diffusion barrier pattern on the intrinsic semiconductor pattern, and a second semiconductor pattern including a second impurity on the second diffusion barrier pattern.