The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Jul. 07, 2015
Applicants:

Seung-sik Kim, Hwaseong-si, KR;

Young-chan Kim, Seongnam-si, KR;

Eun-sub Shim, Anyang-si, KR;

Min-seok OH, Osan-si, KR;

Ji-won Lee, Daegu, KR;

Moo-sup Lim, Yongin-si, KR;

Tae-han Kim, Suwon-si, KR;

Dong-joo Yang, Seongnam-si, KR;

Inventors:

Seung-Sik Kim, Hwaseong-si, KR;

Young-Chan Kim, Seongnam-si, KR;

Eun-Sub Shim, Anyang-si, KR;

Min-Seok Oh, Osan-si, KR;

Ji-Won Lee, Daegu, KR;

Moo-Sup Lim, Yongin-si, KR;

Tae-Han Kim, Suwon-si, KR;

Dong-Joo Yang, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/14603 (2013.01); H01L 27/14623 (2013.01); H01L 27/14641 (2013.01);
Abstract

Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.


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