The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Nov. 23, 2015
Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Eiichi Sato, Tokyo, JP;

Shinya Ono, Osaka, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 29/42384 (2013.01);
Abstract

A thin film transistor substrate including a thin film transistor and a capacitor formed of a pair of electrodes, which includes: a first electrode above a substrate; a first insulating film above the first electrode; a second electrode above the first insulating film; a second insulating film above the second electrode; and a semiconductor layer above the second insulating film, in which the capacitor includes the first electrode as one of the pair of electrodes and the second electrode as the other of the pair of electrodes, and the thin film transistor includes the second electrode as a gate electrode, the second insulating film as a gate insulating film, and the semiconductor layer as a channel layer.


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