The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Sep. 07, 2012
Ki-hong Yang, Gyeonggi-do, KR;
Ki-Hong Yang, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a non-volatile memory device includes forming a stacked structure where a plurality of inter-layer dielectric layers and a plurality of second sacrificial layers are alternately stacked over the first gate electrode layer, forming a first channel hole that exposes the first sacrificial layer by penetrating through the stacked structure, forming a second channel hole by removing the exposed first sacrificial layer, forming an oxide layer by oxidizing a surface of the first gate electrode layer exposed through the first and second channel holes, forming a channel layer in the first and second channel holes, and forming second gate electrode layers in spaces from which the second sacrificial layers are removed, wherein a memory layer is interposed between the channel layer and the second gate electrode layer.