The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Nov. 19, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si,Gyeonggi-Do, KR;

Inventors:

Ju-Youn Kim, Suwon-si, KR;

Je-Don Kim, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28247 (2013.01); H01L 21/76801 (2013.01); H01L 21/76829 (2013.01); H01L 21/82345 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 21/76897 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern along side and bottom surfaces of the trench, forming a second metal gate film on the first metal gate film pattern and the insulation film, and forming a second metal gate film pattern positioned on the first metal gate film pattern by removing the second metal gate film to expose at least a portion of the insulation film and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern.


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