The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Jan. 23, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Il-Cheol Rho, Gyeonggi-do, KR;
Jong-Min Lee, Gyeonggi-do, KR;
Assignee:
SK Hynic Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 29/92 (2006.01); H01L 21/764 (2006.01); H01L 21/28 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/28008 (2013.01); H01L 21/764 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 27/10855 (2013.01); H01L 29/92 (2013.01); H01L 27/10823 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on sidewalls of the open parts, forming conductive layer patterns in the open parts, and causing the conductive layer patterns and the sacrificial spacers to reach each other, and defining air gaps on the sidewalls of the open parts.