The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Aug. 03, 2016
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/448 (2006.01); H01J 37/32 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/70 (2006.01); H01L 31/077 (2012.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 29/045 (2013.01); H01L 29/16 (2013.01);
Abstract
The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.