The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Jan. 08, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Yasushi Nakajima, Kawasaki, JP;

Hideaki Yamamoto, Yokosuka, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/22 (2006.01); G11C 16/26 (2006.01); G11C 16/16 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/22 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 29/02 (2013.01);
Abstract

A semiconductor memory device according to an embodiment comprises: a memory cell array, the memory cell array including a memory block, the memory block including a memory cell, the memory cell including a semiconductor layer, a conductive layer, and a charge accumulation layer, the charge accumulation layer being disposed between the semiconductor layer and the conductive layer; and a control circuit that executes an access operation on the memory cell, the control circuit, triggered by the access operation, detecting a leak current of the conductive layer, and when the leak current is a certain value or more, executing a faulty memory block processing that registers as an access-prohibited region the memory block including the conductive layer.


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