The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Jul. 07, 2016
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Kevin Michael Conley, San Jose, CA (US);

Raul-Adrian Cernea, Santa Clara, CA (US);

Eran Sharon, Rishon Lezion, IL;

Idan Alrod, Herzliya, IL;

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 11/1012 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/107 (2013.01); G11C 16/3459 (2013.01);
Abstract

A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.


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