The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Apr. 21, 2015
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Dao-Ping Wang, Hsinchu, TW;

Chia-Wei Wang, Taichung, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 7/06 (2006.01); G11C 7/00 (2006.01); G11C 16/12 (2006.01); G11C 17/12 (2006.01); G11C 17/14 (2006.01); G11C 11/56 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/06 (2013.01); G11C 5/06 (2013.01); G11C 7/00 (2013.01); G11C 11/5692 (2013.01); G11C 16/12 (2013.01); G11C 17/12 (2013.01); G11C 17/14 (2013.01); G11C 5/063 (2013.01); G11C 5/14 (2013.01);
Abstract

A memory circuit includes a transistor, a signal line and a plurality of information lines. The transistor includes a first electrode, a second electrode and a control electrode. The transistor is included in a memory cell. The signal line is connected to the first electrode of the transistor. The voltage on the signal line is programmable. At most one of the information lines is connected to the second electrode of the transistor via a contact. Information stored in the memory cell is coded according to the voltage programmed on the signal line and an option of which information line the contact should connect to the second electrode of the transistor.


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