The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Dec. 14, 2011
Steven Edward Coe, Ascot, GB;
Jonathan James Wilman, Ascot, GB;
Helen Wilman, Leeds, GB;
Daniel James Twitchen, Ascot, GB;
Geoffrey Alan Scarsbrook, Ascot, GB;
John Robert Brandon, Ascot, GB;
Christopher John Howard Wort, Ascot, GB;
Matthew Lee Markham, Ascot, GB;
Steven Edward Coe, Ascot, GB;
Jonathan James Wilman, Ascot, GB;
Daniel James Twitchen, Ascot, GB;
Geoffrey Alan Scarsbrook, Ascot, GB;
John Robert Brandon, Ascot, GB;
Christopher John Howard Wort, Ascot, GB;
Matthew Lee Markham, Ascot, GB;
Element Six Limited, Ballasalla, IM;
Abstract
Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cmper minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.