The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Oct. 11, 2013
Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Motoki Haishi, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Tomonori Noguchi, Ibaraki, JP;

Yoshifumi Asahara, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01); B29C 71/02 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); G06F 3/044 (2006.01); G06F 3/045 (2006.01);
U.S. Cl.
CPC ...
B29C 71/02 (2013.01); C23C 14/086 (2013.01); C23C 14/5806 (2013.01); G06F 3/044 (2013.01); G06F 3/045 (2013.01); G06F 2203/04103 (2013.01); Y10T 428/2495 (2015.01); Y10T 428/24975 (2015.01); Y10T 428/25 (2015.01); Y10T 428/26 (2015.01);
Abstract

A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%).


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