The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Apr. 17, 2015
Futurewei Technologies, Inc., Plano, TX (US);
Yoonhyuk Ro, Gainesville, FL (US);
Xuya Qiu, High Point, NC (US);
FUTUREWEI TECHNOLOGIES, INC., Plano, TX (US);
Abstract
Embodiments are provided for biasing circuits with compensation of process variation without band-gap referenced current or voltage. In an embodiment, a circuit for biasing a field-effect transistor (FET) passive mixer comprises a series of diode-connected FETs, and a series of first resistors connected to a voltage source and the series of diode-connected FETs. Additionally, one or more second resistors are connected to the series of diode-connected FETs and to ground. In an embodiment method, the total number of the diode-connected FETs and the total number of the resistors, including the first and second series of resistors, are selected. The total number of the second resistors is then determined according to a defined relation between the selected total number of diode-connected FETs and the total number of resistors.