The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Sep. 16, 2015
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Woo-Tae Lee, Icheon, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); G06F 12/0875 (2016.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G06F 12/0875 (2013.01); G06F 13/1673 (2013.01); H01L 27/249 (2013.01); H01L 27/2427 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); G06F 2212/451 (2013.01); G06F 2212/452 (2013.01);
Abstract

An electronic device includes a semiconductor memory. The semiconductor memory includes a vertical electrode layer formed over a substrate and extending in a vertical direction substantially perpendicular to a surface of the substrate; an interlayer dielectric layer and a structure formed over the substrate and alternately stacked along the vertical electrode layer, wherein the structure includes a horizontal electrode layer and a base layer which is conductive and located over or under the horizontal electrode layer; a variable resistance layer interposed between the vertical electrode layer and the base layer, and including a common element with the base layer; and a groove interposed between the vertical electrode layer and the horizontal electrode layer and insulating the vertical electrode layer and the horizontal electrode layer from each other.


Find Patent Forward Citations

Loading…