The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

May. 12, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kwang-seok Kim, Seoul, KR;

Sung-chul Lee, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01F 10/30 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); B82Y 40/00 (2013.01); G11C 11/161 (2013.01); H01F 10/30 (2013.01); H01F 10/3254 (2013.01); H01F 41/302 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 10/3286 (2013.01);
Abstract

Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.


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