The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Feb. 04, 2016
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tsen-Kuei Wang, Hsinchu, TW;

Ming-Yung Jow, Hsinchu, TW;

Bor-Cherng Chen, Hsinchu, TW;

Tsung-Ta Yu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/38 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.


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