The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

May. 19, 2014
Applicant:

El-seed Corporation, Nagoya-shi, JP;

Inventors:

Masaki Ohya, Nagoya, JP;

Koichi Naniwae, Nagoya, JP;

Atsushi Suzuki, Nagoya, JP;

Toshiyuki Kondo, Nagoya, JP;

Midori Mori, Nagoya, JP;

Assignee:

EL-SEED CORPORATION, Nagoya-Shi, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 33/22 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 2933/0083 (2013.01);
Abstract

In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×λ≦P≦16/9×λ is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is λ.


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