The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Mar. 21, 2016
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Hugo Bender, Edegem, BE;
Yang Qiu, Leuven, BE;
Assignees:
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU Leuven R&D, Leuven, BE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); H01L 33/28 (2010.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 33/0054 (2013.01); H01L 33/28 (2013.01); H01L 33/08 (2013.01);
Abstract
An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.