The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 09, 2014
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Adrian Stefan Avramescu, Regensburg, DE;
Teresa Wurm, Mintraching, DE;
Jelena Ristic, Regensburg, DE;
Alvaro Gomez-Iglesias, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlInGaN where 0<=x<=1, 0<=y<=1 and x+y<=1. The layer sequence includes a first p-doped layer having an aluminum proportion x>=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x<xand a third p-doped layer having an aluminum proportion x<x