The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 26, 2011
Nathan Frederick Gardner, Sunnyvale, CA (US);
Melvin Barker Mclaurin, San Jose, CA (US);
Michael Jason Grundmann, Sunnyvale, CA (US);
Werner Goetz, Palo Alto, CA (US);
John Edward Epler, San Jose, CA (US);
Qi YE, Freemont, CA (US);
Nathan Frederick Gardner, Sunnyvale, CA (US);
Melvin Barker McLaurin, San Jose, CA (US);
Michael Jason Grundmann, Sunnyvale, CA (US);
Werner Goetz, Palo Alto, CA (US);
John Edward Epler, San Jose, CA (US);
Qi Ye, Freemont, CA (US);
KONINKLIJKE PHILIPS N.V., Eindhoven, NL;
Abstract
In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|substrate−a layer|)/substrate]*100% is no more than 1%.