The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Feb. 25, 2015
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Hiroaki Jiroku, Nagano, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 27/146 (2006.01); G06K 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14692 (2013.01); G06K 9/00013 (2013.01); G06K 2009/0006 (2013.01); G06K 2009/00932 (2013.01);
Abstract
A photoelectric conversion apparatus includes a substrateand a photodiodein which a first semiconductor layer, a second semiconductor layerand a third semiconductor layerare laminated on the substratein the stated order. The second semiconductor layeris an i-type semiconductor layer, and one of the first semiconductor layerand the third semiconductor layeris an n-type semiconductor layer, and the other is a p-type semiconductor layer. Also, the first semiconductor layeris covered by the second semiconductor layer