The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Oct. 22, 2012
Applicants:

Stephen J. Fonash, State College, PA (US);

Handong LI, State College, PA (US);

David Stone, Anaheim, CA (US);

Inventors:

Stephen J. Fonash, State College, PA (US);

Handong Li, State College, PA (US);

David Stone, Anaheim, CA (US);

Assignee:

LCCM Solar, LLC, Harrisburg, PA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01); H01L 31/0224 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); B82Y 20/00 (2013.01); H01L 31/022425 (2013.01); H01L 31/022433 (2013.01); H01L 31/03529 (2013.01); H01L 31/18 (2013.01); H01L 51/447 (2013.01); H01L 51/445 (2013.01); Y02E 10/549 (2013.01); Y10T 428/24174 (2015.01);
Abstract

A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode.


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