The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Sep. 03, 2013
Applicant:

Korea Institute of Energy Research, Daejeon, KR;

Inventors:

Ara Cho, Daejeon, KR;

Kyung Hoon Yoon, Daejeon, KR;

SeJin Ahn, Daejeon, KR;

Jae Ho Yun, Daejeon, KR;

Young Joo Eo, Daejeon, KR;

Jihye Gwak, Daejeon, KR;

Kee Shik Shin, Daejeon, KR;

SeoungKyu Ahn, Daejeon, KR;

Jun Sik Cho, Daejeon, KR;

Jin-Su Yoo, Seoul, KR;

Joo Hyung Park, Daejeon, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); C01B 19/00 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035209 (2013.01); C01B 19/00 (2013.01); C01B 19/007 (2013.01); H01L 31/0322 (2013.01); H01L 31/0352 (2013.01); H01L 31/1864 (2013.01); C01P 2004/80 (2013.01); C01P 2006/40 (2013.01);
Abstract

A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—AgSe core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.


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