The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 29, 2014
Carolyn Rae Ellinger, Rochester, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
Carolyn Rae Ellinger, Rochester, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
EASTMAN KODAK COMPANY, Rochester, NY (US);
Abstract
A transistor includes a substrate and an electrically conductive gate over the substrate. The gate has a gate length. A source electrode and a drain electrode are over the substrate, and are separated by a gap defining a channel region. The channel region has a channel length that is less than the gate length. A semiconductor layer is in contact with the source electrode and drain electrode. A dielectric stack is in contact with the gate, and has first, second, and third regions. The first region is in contact with the semiconductor layer in the channel region, and has a first thickness. The second region is adjacent to the first region that has the first thickness. The third region is adjacent to the second region, and has a thickness that is greater than the first thickness.