The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Mar. 22, 2013
Infineon Technologies Austria Ag, Villach, AT;
Britta Wutte, Feistritz, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
An integrated power transistor circuit includes a contact structure with a first section and a second section. The first section contacts doped regions of transistor cells in a cell array. The second section includes one or more first subsections which adjoin the first section and extend beyond the cell array in the region of selected transistor cells. A second subsection adjoins the one or more first subsections and forms a tapping line, for example for making contact with source regions of power transistor cells. In the region of the cell array, an electrode structure rests on the contact structure. This electrode structure is absent over the second section. The tapping line can thus be formed at a short distance from the electrode structure, with the result that the active chip area is only insubstantially reduced by the tapping line.