The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Feb. 27, 2015
Electronics and Telecommunications Research Institute, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Byoung-Gue Min, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Seong-Il Kim, Daejeon, KR;
Sang Heung Lee, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.