The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
May. 11, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Min-Chul Sun, Seoul, KR;
Byung-Gook Park, Seoul, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02532 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01); H01L 29/7843 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a first mask on a substrate, forming a first side wall of a fin by performing a first etching of the substrate using the first mask, forming a second mask on the substrate, the second mask being different from the first mask, and forming a second side wall of the fin by performing a second etching of the substrate using the second mask.