The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Feb. 18, 2016
Samsung Electronics Co., Ltd., Suwon-si, OT, KR;
Krishna Kumar Bhuwalka, Suwon-si, KR;
Zhenhua Wu, Suwon-si, KR;
Uihui Kwon, Hwaseong-si, KR;
Keunho Lee, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a finFET device. The finFET device may include an active region which protrudes vertically from a substrate, a channel region disposed on a center of the active region, a drain region disposed on one side surface of the channel region, and a source region disposed on the other side surface of the channel region, a gate insulating layer formed on two opposing side surfaces of the channel region and having a U-shaped cross-section, gate spacers formed on outer surfaces of the gate insulating layer, drain spacers formed on two opposing side surfaces of the drain region, and source spacers formed on two opposing side surfaces of the source region, and at least one of the two side surfaces of the drain region has a tapered part.