The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Apr. 14, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Zhilian Xiao, Beijing, CN;

Haisheng Zhao, Beijing, CN;

Xiaoguang Pei, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/0217 (2013.01); H01L 21/31058 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 27/124 (2013.01);
Abstract

The present disclosure provides a method for forming a thin film pattern. The method includes steps of: forming a mask pattern on a thin film in such a manner that the mask pattern includes a reserved portion corresponding to a region where the thin film pattern to be formed is located, and a partially-reserved portion neighboring the reserved portion; performing a wet-etching process to etch off a portion of the thin film which is not covered by the mask pattern; performing a dry etching process to remove the partially-reserved portion and thin the reserved portion; and performing a dry etching process to etch off a portion of the thin film which is not covered by the remaining mask pattern, so as to form the thin film pattern.


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