The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jan. 04, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Kimitoshi Okano, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/764 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823857 (2013.01); H01L 21/823878 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/7843 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes an element isolation insulating film, a gate electrode film, source/drain regions, a channel region, and an air gap. The element isolation insulating film partitions an element arrangement area on one main face side of a semiconductor substrate. The channel region is disposed near a surface of the semiconductor substrate below the gate electrode film. The air gap is disposed at a region of the element isolation insulating film contacting with the channel region.