The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Sep. 08, 2014
Satoru Kameyama, Toyota, JP;
Shinya Iwasaki, Toyota, JP;
Yuki Horiuchi, Toyota, JP;
Shuhei Oki, Nagakute, JP;
Satoru Kameyama, Toyota, JP;
Shinya Iwasaki, Toyota, JP;
Yuki Horiuchi, Toyota, JP;
Shuhei Oki, Nagakute, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N, a local minimum value N, a local maximum value N, and a density Nare formed in this order from front surface side, a relationship of N>N>N>Nis satisfied, a relationship of N/10>Nis satisfied, and a distance 'a' from the surface to the depth having the local maximum value Nis larger than twice a distance 'b' from the depth having the local maximum value Nto the depth having the local minimum N