The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Feb. 23, 2016
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Yeh-Jen Huang, Hsinchu, TW;

Yeh-Ning Jou, Hsinchu, TW;

Geeng-Lih Lin, Zhudong Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01);
Abstract

An ESD protection device is provided. Each of a first and a second well has a first conductive type. Each of a first and a second doping region has a second conductive type and is formed in the first well. A third doping region has the first conductive type. A fourth doping region has the second conductive type. The third and fourth doping regions are formed in the second doping region. Each of a fifth and a sixth doping region has the second conductive type and is formed in the second well. A seventh doping region has the first conductive type. An eighth doping region has the second conductive type. The seventh and eighth doping region are formed in the sixth doping region. A first and a second trigger gate are formed on the first and second wells and partially cover the second and sixth doping regions respectively.


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