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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9633946 B1

PDFFull Text
Date of Patent:
Apr. 25, 2017

Filed:

Apr. 27, 2016

Seamless metallization contacts

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jim Shih-Chun Liang, Poughkeepsie, NY (US);

Domingo A. Ferrer, Fishkill, NY (US);

Kathryn T. Schonenberg, Wappingers Falls, NY (US);

Shahrukh Akbar Khan, Danbury, CT (US);

Wei-Tsu Tseng, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Anthony Canale

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon, P.C.

Primary Examiner:

S V Clark

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53257 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

Find Patent Forward Citations

Liang, Jim Shih-Chun. (2017). Seamless metallization contacts (U.S. Patent No. 9633946). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9633946

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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