The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Apr. 07, 2016
Applicant:
Sumco Corporation, Tokyo, JP;
Inventor:
Keiichiro Mori, Saga, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); H01L 21/66 (2006.01); G01N 21/88 (2006.01); G01N 21/94 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/8806 (2013.01); G01N 21/94 (2013.01); G01N 21/9501 (2013.01); G01N 2021/8825 (2013.01); G01N 2021/8845 (2013.01); G01N 2201/06113 (2013.01);
Abstract
The method of evaluating an epitaxial wafer includes performing evaluation of an epitaxial wafer by detecting, as a light point defect, an abnormal substance selected from the group consisting of a defect and a surface deposit of an epitaxial wafer to be evaluated with a surface inspection apparatus including two types of incidence systems with different incidence angles and two types of light receiving systems with different light receiving angles, based on two types of measurement results.