The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
May. 11, 2016
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Jun Genba, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A step of preparing a silicon carbide substrate (S), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S), and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas (S) are provided. In the step of forming a first silicon carbide semiconductor layer (S) and the step of forming a second silicon carbide semiconductor layer (S), ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms.