The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Jun. 11, 2012
Applicant:

Kazuhiro Murakami, Kyoto, JP;

Inventor:

Kazuhiro Murakami, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H03K 19/003 (2006.01); H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136204 (2013.01); H02H 9/043 (2013.01); H03K 19/00315 (2013.01); H01L 27/0251 (2013.01);
Abstract

An overvoltage protection portion () includes a transistor (P) that achieves continuity with an input voltage (VIN) used as an output voltage (VOUT) to an internal circuit when the input voltage (VIN) applied to an external terminal (T) is not in an overvoltage state. The overvoltage protection portion () also includes: a transistor (P) operating as a short circuit that short-circuits the source and the gate of the transistor (P) and that interrupts the input voltage (VIN) when the input voltage (VIN) is in the overvoltage state; a resistor (R); and a Zener diode (ZD). The overvoltage protection portion () also includes: a transistor (NTr) operating as a bypass circuit that supplies a constant output voltage (VOUT) from the external terminal (T) to the internal circuit when the input voltage (VIN) is brought into the overvoltage state; a resistor (R); and a Zener diode (ZD).


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