The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Sep. 18, 2014
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, CN;
Inventor:
Qibiao Lv, Shenzhen, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1339 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13394 (2013.01); G02F 1/1333 (2013.01); G02F 2001/13398 (2013.01);
Abstract
A mask and a method of manufacturing photoresist spacers with the mask are provided. The method includes: using the mask to expose and develop to a coated negative resist material, so as to form at least one sub photoresist spacer with at least one predetermined height, wherein an area of the shading portion of the first penetration region is determined according to the predetermined height of the sub photoresist spacer. Using the mask and the method of manufacturing photoresist spacers with the mask, different heights of the sub photoresist spacers can be obtained.