The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Feb. 19, 2015
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Masakazu Nishida, Chino, JP;

Shohei Yoshida, Shimo-suwa-machi, JP;

Takenori Hirota, Suwa, JP;

Tomokazu Umeno, Suwa, JP;

Akinori Masuzawa, Okaya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/133 (2006.01); G02F 1/1337 (2006.01); G09G 3/36 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G09G 3/20 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13306 (2013.01); G02F 1/1337 (2013.01); G02F 1/1368 (2013.01); G02F 1/133734 (2013.01); G02F 1/136213 (2013.01); G09G 3/3648 (2013.01); G02F 2001/133746 (2013.01); G02F 2001/133773 (2013.01); G09G 3/2092 (2013.01); G09G 2300/0876 (2013.01); G09G 2310/0205 (2013.01); G09G 2310/0218 (2013.01); G09G 2320/0247 (2013.01);
Abstract

In a liquid crystal device according to the invention, a pre-tilt angle of a liquid crystal layer is greater on an opposing electrode side than on a pixel electrode side. A high potential and a low potential relative to an opposing electrode potential are alternately applied to pixel electrodes through switching elements; and the opposing electrode potential is higher than a standard potential, the standard potential being a potential in which the average potential between the high potential and the low potential has been shifted by an amount equivalent to the average value of the amount of change in the potential of the pixel electrodes caused by parasitic capacitance in the switching elements when the high potential is applied to the pixel electrodes and the amount of change in the potential of the pixel electrodes caused by parasitic capacitance when the low potential is applied to the pixel electrodes.


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