The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

May. 28, 2014
Applicant:

Agc Glass Europe, Louvain-la-Neuve, BE;

Inventors:

Stijn Mahieu, Lovendegem, BE;

Anne-Christine Baudouin, Louvain-la-Neuve, BE;

Marc Hauptmann, Kessel-Lo, BE;

Jean-Michel Depauw, Brussels, BE;

Michael Purwins, Offensen, DE;

Eric Mathieu, Sarreguemines, FR;

Hansjoerg Weis, Hoexter, DE;

Assignee:

AGC GLASS EUROPE, Louvain-la-Neuve, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 17/06 (2006.01); C03C 17/36 (2006.01);
U.S. Cl.
CPC ...
C03C 17/366 (2013.01); C03C 17/3618 (2013.01); C03C 17/3626 (2013.01); C03C 17/3639 (2013.01); C03C 17/3642 (2013.01); C03C 17/3644 (2013.01); C03C 17/3681 (2013.01);
Abstract

The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+1 dielectric coatings, characterized in that: (i) the first dielectric coating comprises a layer made from an oxide in contact with the substrate, (ii) the portion of the coating stack between two functional layers comprises, in order: a barrier layer, a zinc oxide-based layer, a layer of zinc-tin mixed oxide, a nucleation layer, and (iii) the last dielectric coating comprises a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm overlaid with a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm superposed thereon.


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