The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Mar. 25, 2014
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Sook-Joo Kim, Icheon-Si, KR;

Jae-Geun Oh, Icheon-Si, KR;

Keum-Bum Lee, Icheon-Si, KR;

Hyung-Suk Lee, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 45/00 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 43/12 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01);
Abstract

An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.


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