The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jul. 04, 2011
Applicants:
Noriyoshi Seo, Hiki-gun, JP;
Atsushi Matsumura, Chichibu, JP;
Ryouichi Takeuchi, Kawasaki, JP;
Inventors:
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/06 (2010.01); A01G 7/04 (2006.01); H01L 33/30 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); A01G 7/045 (2013.01); H01L 33/30 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); Y02P 60/149 (2015.11);
Abstract
The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate () and a pn-junction type light-emitting unit () provided on the GaAs substrate (), wherein light-emitting unit () is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlGa)InP (0.3≦X≦0.7, 0.51≦Y≦0.54).