The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627529 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 18, 2017

Filed:

May. 21, 2015
Applicant:

Altera Corporation, San Jose, CA (US);

Inventors:

Yue Teng Tang, Bayan Lepas, MY;

Albert Victor Kordesch, Georgetown, MY;

Assignee:

Altera Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7817 (2013.01); H01L 21/823892 (2013.01); H01L 27/0207 (2013.01); H01L 27/0617 (2013.01); H01L 27/11807 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01); H01L 29/66545 (2013.01);
Abstract

In one embodiment, an integrated circuit includes an array of active structures, an array of dummy structures and multiple well-tap structures. The array of dummy structures surrounds the array of active structures. The well-tap structures may be interposed between the array of active structures and the array of dummy structures. In one embodiment, each of the well-tap structures may include a well, a diffusion region and a gate-like structure. The well may be formed in a substrate and is of a first doping type. The diffusion region may be formed in the well and is also of the first doping type. The gate-like structure may be formed above the substrate and adjacent to the diffusion region.


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